Improving the surface morphology of InSb quantum-well structures on GaAs substrates
Identifieur interne : 012095 ( Main/Repository ); précédent : 012094; suivant : 012096Improving the surface morphology of InSb quantum-well structures on GaAs substrates
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Abstract
The electron mobility in AlxIn1-xSb/InSb quantum-well structures grown on GaAs substrates is reduced due to the presence of crystalline defects. In structures grown by molecular beam epitaxy, we observe three kinds of defects: hillocks, oriented abrupt steps, and square mounds. The hillocks and oriented abrupt steps are caused by lattice mismatch. The square mounds arise only when AlxIn1-xSb is grown and probably originate near the AlxIn1-xSb/buffer layer interface. The optimum V/III growth rate ratio for reducing the square-mound density is ≃1.1 at a substrate temperature of ∼440°C. © 2000 American Vacuum Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Improving the surface morphology of InSb quantum-well structures on GaAs substrates</title><author><name sortKey="Chung, S J" uniqKey="Chung S">S. J. Chung</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Ball, M A" uniqKey="Ball M">M. A. Ball</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Lindstrom, S C" uniqKey="Lindstrom S">S. C. Lindstrom</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Johnson, M B" uniqKey="Johnson M">M. B. Johnson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Santos, M B" uniqKey="Santos M">M. B. Santos</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0245824</idno><date when="2000-05">2000-05</date><idno type="stanalyst">PASCAL 00-0245824 AIP</idno><idno type="RBID">Pascal:00-0245824</idno><idno type="wicri:Area/Main/Corpus">013073</idno><idno type="wicri:Area/Main/Repository">012095</idno></publicationStmt><seriesStmt><idno type="ISSN">1071-1023</idno><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><title level="j" type="main">Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Crystal defects</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Molecular beam epitaxy</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Semiconductor quantum wells</term><term>Surface structure</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865</term><term>8115H</term><term>6855L</term><term>6835B</term><term>8105E</term><term>Etude expérimentale</term><term>Puits quantique semiconducteur</term><term>Epitaxie jet moléculaire</term><term>Croissance semiconducteur</term><term>Semiconducteur III-V</term><term>Indium composé</term><term>Aluminium composé</term><term>Structure surface</term><term>Défaut cristallin</term><term>Couche épitaxique semiconductrice</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The electron mobility in Al<sub>x</sub>In<sub>1-x</sub>Sb/InSb quantum-well structures grown on GaAs substrates is reduced due to the presence of crystalline defects. In structures grown by molecular beam epitaxy, we observe three kinds of defects: hillocks, oriented abrupt steps, and square mounds. The hillocks and oriented abrupt steps are caused by lattice mismatch. The square mounds arise only when Al<sub>x</sub>In<sub>1-x</sub>Sb is grown and probably originate near the Al<sub>x</sub>In<sub>1-x</sub>Sb/buffer layer interface. The optimum V/III growth rate ratio for reducing the square-mound density is ≃1.1 at a substrate temperature of ∼440°C. © 2000 American Vacuum Society.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1071-1023</s0></fA01><fA02 i1="01"><s0>JVTBD9</s0></fA02><fA03 i2="1"><s0>J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</s0></fA03><fA05><s2>18</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Improving the surface morphology of InSb quantum-well structures on GaAs substrates</s1></fA08><fA11 i1="01" i2="1"><s1>CHUNG (S. J.)</s1></fA11><fA11 i1="02" i2="1"><s1>BALL (M. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>LINDSTROM (S. C.)</s1></fA11><fA11 i1="04" i2="1"><s1>JOHNSON (M. B.)</s1></fA11><fA11 i1="05" i2="1"><s1>SANTOS (M. B.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy, Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>1583-1585</s1></fA20><fA21><s1>2000-05</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>11992 B</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0245824</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of vacuum science & technology. B. Microelectronics and nanometer structures. 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